| Novel approach to harmonic control for Class F power amplifier with high power added efficiency |
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| 作者姓名： | Jin Boshi Wu Qun Yang Guohui Kim Bumman |
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| 作者单位： | [1]School of Electronics and Information Technology, Harbin Institute of Technology, Harbin 150001, China [2]Department of Electronics and Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea, 790784 |
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| 摘 要： | This paper presents a new topology to implement Class F power amplifier for eliminating the on -resistance （ RON ） effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET （HFET） device, and analyzed the measurement results. Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.
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| 关 键 词： | F类功率放大器 功效 谐波控制 电阻 傅里叶级数 |
| 修稿时间： | 2007-05 |
Novel approach to harmonic control for Class F power amplifier with high power added efficiency |
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| Jin Boshi Wu Qun Yang Guohui Kim Bumman.Novel approach to harmonic control for Class F power amplifier with high power added efficiency[J].Chinese Journal of Scientific Instrument,2007,28(7):1176-1179. |
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| Authors: | Jin Boshi Wu Qun Yang Guohui Kim Bumman |
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| Abstract: | This paper presents a new topology to implement Class F power amplifier for eliminating the on - resistance ( RON ) effect. The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are analyzed using Fourier series analysis method. Considering the on-resistance effect, the formulas of the efficiency, output power, dc power dissipation, and fundamental load impedance are given from ideal current and voltage waveforms. For experimental verification, we designed and implemented a Class F power amplifier, which operates at 850 MHz using AlGaAs/GaAs Heterostructure FET (HFET) device, and analyzed the measurement results. Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level. |
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| Keywords: | Class F power amplifier power added efficiency (PAE) harmonic control on-resistance |
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