| 等离子增强化学气相沉积制备氧化硅薄膜的质谱诊断研究 |
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| 引用本文： | 张军峰,陈强,刘福平,刘忠伟.等离子增强化学气相沉积制备氧化硅薄膜的质谱诊断研究[J].核技术,2009,32(3). |
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| 作者姓名： | 张军峰 陈强 刘福平 刘忠伟 |
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| 作者单位： | 北京印刷学院印刷包装材料与技术北京市重点实验室,北京,102600 |
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| 摘 要： | 以六甲基二硅氧烷((CH3)3-Si-O-Si-(CH3)3,HMDSO)为单体,采用等离子增强化学气相沉积技术制备氧化硅薄膜,研究引起薄膜生长的前驱体、中间产物及活性自由基或分子.通过四极杆质谱仪对气相中的中间产物及活性粒子进行原位诊断,进行了不同功率、气压及O2与HMDSO比例(X)等对它们含量的影响研究.实验发现:高功率,低气压,及高O2含量有利于有机硅化合物的裂解.我们认为氧化硅沉积过程中质荷比为147的离子是气相反应形成含硅粒子的主要前驱体,对薄膜的形成起主要作用.
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| 关 键 词： | 氧化硅 原位诊断 质谱分析 |
Mass spectrometry diagnosis in SiOx coating grown by PECVD plasma |
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| ZHANG Junfeng,CHEN Qiang,LIU Fuping,LIU Zhongwei.Mass spectrometry diagnosis in SiOx coating grown by PECVD plasma[J].Nuclear Techniques,2009,32(3). |
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| Authors: | ZHANG Junfeng CHEN Qiang LIU Fuping LIU Zhongwei |
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| Affiliation: | Laboratory of Plasma Physics and Materials;Beijing Institute of Graphic Communication;Beijing 102600;China |
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| Abstract: | Neutral radicals or small molecules were the precursor for film growth,but what plays a major role depends on the discharge conditions and films deposited. In our lab,we use (CH3)3-Si-O-Si-(CH3)3,or hexamethyldisiloxane (HMDSO),as monomer,and plasma enhanced chemical vapor deposition (PECVD),to deposit silicon dioxide. This paper is emphasized on the neutral radicals and small molecules diagnosed in situ by quadrupolar mass spectrometer. The influence of operation parameter,such as input power,working press... |
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| Keywords: | SiOx in situ diagnosis Mass spectrometry |
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