碲镉汞的液相外延生长

设计了一种使用良好的石墨舟 ,建立了一套能进行开管液相外延的系统 ,并利用此系统在 Cd Zn Te衬底上和在富 Te的生长条件下生长了不同 x值的 Hg Cd Te外延薄膜 .通过对外延生长工艺的控制 ,外延薄膜的表面形貌有很大的改善 ,残留母液大为减少 ,外延薄膜的组分比较均匀 ,其电学性能得到较大改善 ,Hg Cd Te外延薄膜与Cd Zn Te衬底之间的互扩散非常少 ,外延膜的晶体结构也较完整 .

Growth of HgCdTe by Liquid Phase Epitaxy

A novel graphite boat has been designed and an open-tube system for LPE growth with a mercury source been set up.With hydrogen as carrying gas,the mercury steam from a heating mercury source would compensate that volatilized from the growth liquid.Epitaxial films of HgCdTe with various values of x have been grown in Te-rich solution and on CdZnTe substrates using this system.By controlling the growth procedure,the morphology of HgCdTe epitaxial films is observed improved obviously,and remained melt on the surface of films has been reduced greatly.The constituent of epitaxial films is rather homogeneous with electrical characteristic improved obviously.The inter-diffusion between MCT epitaxial films and CdZnTe substrates is very little,and the crystal structure of MCT epitaxial films is perfect.