| 低损耗高温型R特性高压电容器瓷料的研制 |
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| 引用本文： | 戴文金,袁纪烈,张子清.低损耗高温型R特性高压电容器瓷料的研制[J].电子元件与材料,1995(6). |
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| 作者姓名： | 戴文金 袁纪烈 张子清 |
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| 作者单位： | 沂南同皓电子元件有限公司 |
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| 摘 要： | 采用Ｂｉ（３＋）、Ｐｂ（２＋）、Ｍｇ（２＋）与主晶相ＳｒＴｉＯ３固溶，并添加适量的Ｎｂ２Ｏ５、ＳｉＯ２、Ｙ２Ｏ３对ＳｒＴｉＯ３进行改性，研制出εｒ≥２２００，１ｋＨｚ时ｔｇδ≤０．１０×１０（－２），１０ｋＨｚ时ｔｇδ≤０．３０×１０（－２），－２５～＋８５℃｜△Ｃ／Ｃ｜≤１５％，Ｅｂ（ＤＣ）＞９Ｖ／μｍ，Ｒｉ＞１０（１２）Ω，耐高温（可达＋１２５℃），高频性能好的新型介质材料。该瓷料适合制作工作频率高、表面温升低的低损耗、耐高温的高压瓷介电容器。
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| 关 键 词： | 低损耗 R特性 掺杂 铁酸锶 高压电容器 |
Development of a Ceramics for the Capacitor with R Characteristic and Low Loss Working at High Temperature and Hing Voltage |
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| Dai Wenjin, Yuan Jilie, Zhang Ziqing.Development of a Ceramics for the Capacitor with R Characteristic and Low Loss Working at High Temperature and Hing Voltage[J].Electronic Components & Materials,1995(6). |
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| Authors: | Dai Wenjin Yuan Jilie Zhang Ziqing |
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| Affiliation: | Dai Wenjin; Yuan Jilie; Zhang Ziqing |
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| Abstract: | SrTiO3 was modified by making a solid solution a solid solution with Bi(3+). Pb(2+). Mg(2+). in SrTiO3 and adding appropriate amount of Nb2O5. SiO2. Y2O3. A new dielectrics has been developed with ε≥2200.tgδ≤0. 10% (1kHz). tgδ≤0.30% (10kHz) .-25to+85C|△C/C≤15%,Eb>DC9V/μm.Ri>10(12)Ω,higherworking temperatuare (above 125 C) and better frequency characteristic. If is designed to make the capacitors for the application where high frequence, high voltage. high temperature. low surface temperature rise and low loss are required. |
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| Keywords: | Low dielectric loss R characteristic doping SrTiO_3 high voltage capacitor |
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