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Comparative study of the electrical characteristics of ALD-ZnO thin films using H2O and H2O2 as the oxidants |
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| Authors: | Woo-Jae Lee Susanta Bera Zhixin Wan Wei Dai Jong-Seong Bae Tae Eun Hong Kwang-Ho Kim Ji-Hoon Ahn Se-Hun Kwon |
| Affiliation: | 1. School of Materials Science and Engineering, Pusan National University, Busan, Republic of Korea Global Frontier R&D Center for Hybrid Interface Materials, Pusan National University, Busan, Republic of Korea;2. Global Frontier R&D Center for Hybrid Interface Materials, Pusan National University, Busan, Republic of Korea Institute of Materials Technology, Pusan National University, Busan, Republic of Korea;3. Institute of Materials Technology, Pusan National University, Busan, Republic of Korea School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, PR China;4. Division of High Technology Materials Research, Busan Center, Korea Basic Science Institute, Busan, Republic of Korea;5. School of Materials Science and Engineering, Pusan National University, Busan, Republic of Korea;6. Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan, Republic of Korea |
| Abstract: | ZnO thin films were deposited via atomic layer deposition (ALD) using H2O and H2O2 as oxidants with substrate temperatures from 100°C to 200°C. The ZnO films deposited using H2O2 (H2O2-ZnO) showed lower growth rates than those deposited with H2O (H2O-ZnO) at these temperature range due to the lower vapor pressure of H2O2, which produces fewer OH− functional groups; the H2O2-ZnO films exhibited higher electrical resistivities than the H2O-ZnO films. The selection of H2O2 or H2O as oxidants was revealed to be very important for controlling the electrical properties of ALD-ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H2O-ZnO, H2O2-ZnO exhibited poor crystallinity within a growth temperature range of 100-200°C, while H2O2-ZnO showed a strong (002) peak intensity. Photoluminescence showed that H2O2-ZnO had more interstitial oxygen and fewer oxygen vacancies than H2O-ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated. |
| Keywords: | atomic layer deposition thin films zinc oxide |