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| 多晶硅发射极晶体管h_(FE)、G_e、和K的普遍表达式及其分类 | |
| 引用本文： | 蒋翔六,郭维廉,张咏梅. 多晶硅发射极晶体管h_(FE)、G_e、和K的普遍表达式及其分类[J]. 电子学报, 1993, 0(2) |
| 作者姓名： | 蒋翔六 郭维廉 张咏梅 |
| 作者单位： | 北京市科学技术研究院，天津大学电子工程系，天津大学电子工程系 北京 100044，天津 300072，天津 300072 |
| 摘 要： | 本文综合考虑了影响多晶硅发射极晶体管(PET)电流增益的多种因素,针对最全面的器件结构推导出PET的共发射极直流电流增益h_FE发射极Gummel数G_e,和电流增益的增强因子k解析形式的普遍表达式,覆盖了PET的多种结构。并以此对PET从器件结构上进行了科学地分类。此普遍表达式也包含了Ning和Graaff的理论结果。 |
| 关 键 词： | 多晶硅发射极晶体管 双极晶体管 器件物理模型 |
The General Expressions on AFE, Ge and K of PETs and the Classification of PETs |
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| Jiang Xiang liu. The General Expressions on AFE, Ge and K of PETs and the Classification of PETs[J]. Acta Electronica Sinica, 1993, 0(2) | |
| Authors: | Jiang Xiang liu |
| Abstract: | In this paper, The general expressions on common emitter DC Current gain hFE, emitter Gummel number Ge and current gain enhancement factor K of polysilicon emitter transistor (PET) have been derived in the analytical forms for a complete structure of PET by considering various factors which affect the current gain of PETs. The various device structure of PETs can be unified in these general expressions, and according to these expressions, PETs with the different device structure are classified scientifically. These general expressions include Ning's and Graaff's theoretical results. |
| Keywords: | Polysilicon emitter transistor(PET) Bipolar transistor Device physical models |
| 本文献已被 CNKI 等数据库收录！ | |