硫化法制备ZnS薄膜的结构和光学性能研究

采用直流反应磁控溅射法,在玻璃衬底上沉积了ZnO薄膜,然后在H2S气氛和500℃温度下退火制备了六方ZnS薄膜。利用X射线衍射仪(XRD)、UV-VIS分光光度计、扫描电子显微镜(SEM)对样品进行了表征。结果表明:ZnO经0.5 h硫化就能全部生成ZnS,适当提高硫化时间可改善ZnS的结晶性,但硫化时间超过2 h后,结晶性会有所降低;所有制得ZnS薄膜都沿c轴择优生长,其晶粒明显比ZnO更大。此外,这些ZnS薄膜在500~1 100nm波长范围内的光透过率均高达约75%,带隙为3.65~3.70 eV。

Study on the structural and optical properties of ZnS thin films prepared by sulfidation

Hexagonal ZnS thin films were prepared by annealing of ZnO thin films in H2S at 500 ℃,where ZnO was deposited on glass substrates by DC reactive magnetron sputtering.The properties of the prepared films were characterized by XRD,UV-VIS spectrophotometer and SEM.The results show that after 0.5 h sulfidation,ZnO can be converted completely to ZnS.The appropriate increase in sulfidation time may improve the crystallinity of ZnS,while sulfidation time over 2 h leads to some deterioration of its crystallinity.All the prepared ZnS thin films possess the c-axis preferred orientation and much greater grain than ZnO.Besides,these ZnS thin films all exhibit the optical transmittance as high as 75% in the wavelength region of 500–1 100 nm,with the band-gap energies of 3.65–3.70 eV.