| LiNbO_3/ZnO:Al集成结构的外延生长及电性能研究 |
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| 引用本文： | 邓杰,朱俊,吴智鹏,马陈鹏.LiNbO_3/ZnO:Al集成结构的外延生长及电性能研究[J].电子元件与材料,2013,32(5):9-12. |
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| 作者姓名： | 邓杰 朱俊 吴智鹏 马陈鹏 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 采用脉冲激光沉积(PLD)法在蓝宝石衬底上先后外延生长了ZnO:Al(ZAO)和LiNbO3(LN)薄膜。通过X射线衍射分析(XRD)可知二者之间的外延关系为:LN(001)//ZAO(001)、LN110]//ZAO110]、LN100]//ZAO120]。制备了Au/LN/ZAO和ZAO/LN/ZAO两种电容器结构,对其进行了电流-电压(J-E)测试和铁电(P-E)分析,结果表明:LN/ZAO集成结构具有整流作用,ZAO/LN/ZAO结构表现出较好的绝缘性能,所制备的LN薄膜在室温下的剩余极化强度(Pr)约为1×10–6C/cm2,温度的升高能够促进电畴的翻转,使Pr增加为3×10–6C/cm2。
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| 关 键 词： | 脉冲激光沉积 LiNbO3 ZnO:Al 外延薄膜 集成结构 J-E P-E |
Growth and electric properties study of LiNbO3 thin film on c-sapphire using ZnO:Al conducting layer |
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| DENG Jie,ZHU Jun,WU Zhipeng,MA Chenpeng.Growth and electric properties study of LiNbO3 thin film on c-sapphire using ZnO:Al conducting layer[J].Electronic Components & Materials,2013,32(5):9-12. |
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| Authors: | DENG Jie ZHU Jun WU Zhipeng MA Chenpeng |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | The ZnO:Al(ZAO) and LiNbO3(LN) thin films were epitaxially deposited on sapphire substrate by pulsed laser deposition(PLD).Through X-ray diffraction analysis(XRD),It is obtained that the epitaxial relationship of the two films is: LN(001) // ZAO(001),LN110] // ZAO110],LN100] // ZAO120].Different top electrodes,Au and ZAO,were prepared on the LN film respectively,then the conduction(J-E) and ferroelectric properties(P-E) of the LN film were studied.The results show that LN/ZAO integrated structure has a rectifying effect,and good insulating properties are exhibited in ZAO/LN/ZAO structure.Moreover,it is showed that the remanent polarization(Pr) of LN film deposited on ZAO is about 1×10–6C/cm2 at room temperature.The ferroelectric domain switching of the LN film is enhanced with increasing of the measured temperature,so that the Princreases to 3×10–6C/cm2at 300 ℃. |
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| Keywords: | pulsed laser deposition(PLD) LiNbO3 ZnO:Al epitaxial film integrated structure J-E P-E |
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