生长条件及退火处理对磷化铟单晶结构完整性的影响

利用X射线双晶衍射（XRD）技术研究了原生及退火处理后的磷化铟单晶的晶格完整性. 原生磷化铟单晶中由于存在着大量的位错和高的残留热应力，导致晶格产生很大的畸变，表现为XRD半峰宽的值较高并且分布不均匀，甚至有些原生的磷化铟单晶片出现XRD双峰等. 通过降低晶体生长过程的温度梯度，降低位错密度并减小晶体中的残留热应力可以提高晶体的完整性. 利用高温退火处理也可有效地降低磷化铟晶体中的残留热应力. 对磷化铟晶体生长过程中熔体的配比、掺杂浓度等条件对结构完整性的影响进行了分析.

Influence of Growth and Annealing Conditions on Perfection of InP Single Crystals

X-ray double crystal diffracrion (XRD) is used to study the lattice perfection of as-grown and annealed InP single crystals.The full width at half maximum (FWHM) of XRD of as-grown InP single crystal is wider and double peaks can be observed in some samples.The FWHM of XRD on a whole wafer is not uniform.This is caused by a very large lattice distortion which is originated from a high density of dislocation and residual thermal stress in the as-grown InP.The lattice perfection of InP single crystal can be improved through the reduction of growth temperature gradient,decrease of dislocation density and minimise of residual thermal stress.The residual thermal stress in InP single crystal can also be reduced effectively via high tempreature annealing.The influence of stoichiometry and doping concentration on the crystal perfection is also discussed.