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| 三稳态共振隧穿器件的研制 | |
| 引用本文： | 罗惠英,牛萍娟,陈乃金,郭维廉,梁惠来,王文新. 三稳态共振隧穿器件的研制[J]. 微纳电子技术, 2006, 43(1): 8-10 |
| 作者姓名： | 罗惠英 牛萍娟 陈乃金 郭维廉 梁惠来 王文新 |
| 作者单位： | 1. 天津工业大学信息与通信工程学院,天津,300160 2. 天津大学电子信息工程学院,天津,300072 3. 中科院物理所分子束外延实验室,北京,100080 |
| 摘 要： | 在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件,室温下可以达到较高的电流峰谷比5.2∶1。器件采用两个隧穿二极管背靠背串联的结构,能更大程度提高集成度,可以在多值逻辑或其他有关降低电路复杂性方面获得较为广泛的应用。 |
| 关 键 词： | 共振隧穿二极管 微分负阻 三稳态 多值逻辑 |
| 文章编号： | 1671-4776（2006）01-0008-03 |
| 收稿时间： | 2005-08-22 |
| 修稿时间： | 2005-08-22 |
Research of Tristable RTD |
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| LUO Hui-ying,NIU Ping-juan,CHEN Nai-jin,GUO Wei-lian,LIANG Hui-lai,WANG Wen-xin. Research of Tristable RTD[J]. Micronanoelectronic Technology, 2006, 43(1): 8-10 | |
| Authors: | LUO Hui-ying NIU Ping-juan CHEN Nai-jin GUO Wei-lian LIANG Hui-lai WANG Wen-xin |
| Affiliation: | 1.School of Information and Communication Eng., Tianjin Polytechnic University, Tianjin 300160, China; 2.School of Electronic Information Eng., Tianjin University, Tianjin 300072, China; 3.MBE Lab of Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
| Abstract: | The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.2∶1)of peak to valley at room-temperature. These devices,using a structure of back-to-back connector in series between two RTD,can improve the device integrated level and so could be widely applied in multiple valued logics(MVL)and other aspects relevant to reducing circuit complexity. |
| Keywords: | RTD negative differential resistance tristable MVL |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |