SOI基垂直入射Ge PIN光电探测器的研制

研制了在SOI衬底上工作于近红外波段的垂直入射GePIN光电探测器。采用低温Ge缓冲层技术,在超高真空化学气相淀积系统(UHV/CVD)上生长探测器材料。测试表明,器件的暗电流主要来源于表面漏电流,暗电流密度随着尺寸的增加而减小,在2V偏压时暗电流密度可达17.2mA/cm2;器件在波长1.31μm处的响应度高达0.22A/W,对应量子效率为20.8%。无偏压时,器件的响应光谱在1.2～1.6μm波长范围内观察到4个共振增强峰,分别位于1.25、1.35、1.45和1.55μm左右,峰值半高宽约为50nm,共振增强效应是由SOI衬底的高反射率引起的。采用传输矩阵法模拟的响应光谱与实验测量结果吻合良好。

Fabrication of Ge PIN photodiodes on silicon-on-insulator substrates under normal incidence

A Ge PIN photodiode under normal incidence operating in the near infrared region is demonstrated on the silicon-on-insulator(SOI) substrate.The epitaxial Ge layers are prepared in an ultrahigh vacuum chemical vapor deposition system using low temperature Ge buffer technique.The results show that the dark current density of the device dominated by the surface leakage decreases with the mesa length increasing, and 17.2 mA/cm2 is obtained at 2 V reverse bias.A responsivity of 0.22 A/W at the wavelength of 1.31...