HVPE生长的高质量GaN纳米柱的光学性能

GaN纳米材料因具有优异的晶体质量和突出的光学性能及发射性能,日益受到关注.研究了一种利用氢化物气相外廷(HVPE)系统生长高质量的GaN纳米柱的方法.使用镍作为催化剂,在蓝宝石衬底上生长出了GaN纳米柱.在不同生长时间和不同HC1体积流量下制备了多组样品,使用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)谱对样品进行了分析表征.测试结果表明,在较低的HC1体积流量下,生长2 min的样品具有较高的晶体质量和较好的光学性质.讨论了不同生长阶段的GaN纳米结构发光特性的变化规律,认为纳米结构所产生的表面态密度大小差异会造成带边峰位的红移和展宽.

Optical Properties of High-Quality GaN Nanocolumns Grown by HVPE

GaN nanomaterials have attracted more and more attention because of their excellent crystal quality,outstanding optical properties and emission properties.A method for growing high-quality GaN nanocolumns by hydride vapor phase epitaxy (HVPE) system was studied.GaN nanocolumns were grown on the sapphire substrate with nickel as the catalyst.Several sets of samplcs were prepared at different growth time and different HCl volume flow rates,and the samples were analyzed and characterized by the scanning electron microscope (SEM),X-ray diffraction (XRD) and photoluminescence (PL) spectra.The test results show that the sample with the growth time of 2 min has higher crystal quality and better optical properties at lower HCl volume flow rate.The variation of luminescence properties of GaN nanostructures at different growth stages was discussed,suggesting that the difference of the surface state density caused by the nanostructure can lead to the red shift and broadening of the band edge peak.