基于环形振荡器的TSV故障非接触测试方法

为避免传统的探针检测对硅通孔(TSV)造成损伤的风险,提出了一种非损伤的TSV测试方法.用TSV作为负载,通过环形振荡器测量振荡周期.TSV缺陷造成电阻电容参数的变化,导致振荡周期的变化.通过测量这些变化可以检测TSV故障,同时对TSV故障的不同位置引起的周期变化进行了研究与分析,利用最小二乘法拟合出通过周期来判断故障位置的曲线,同时提出预测模型推断故障电阻范围.测试结构是基于45 nm PTM COMS工艺的HSPICE进行设计与模拟,模拟结果表明,与同类方法相比,此方法在测试分辨故障的基础上对TSV不同位置的故障进行分析和判断,并能推断故障电阻范围.

Non-Contact Test Method of TSV Fault Based on Ring Oscillator

To avoid the risk of damage to the through silicon via (TSV) by conventional probe detection,a non-damage TSV test method was proposed.Using TSV as the load,the oscillation period was measured by the ring oscillator.The TSV defect caused changes in the resistance and capacitance,which led to changes in the oscillation period.These changes can be detected by measuring the TSV fault.At the same time,the periodic changes caused by different positions of TSV faults were studied and analyzed.Using the least squares fitting,the curve of the fault position with the cycle was determined,and the prediction model was proposed to infer the fault resistance range.The test structure was designed and simulated by using HSPICE based on 45 nm PTM COMS technology.The simulation results show that compared with other similar methods,this method can analyze and judge the TSV faults in different locations based on the fault resolution test,and can infer the fault resistance range.