| 10Gb/s OEIC光接收机前端及3.125Gb/s限幅放大器 |
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| 引用本文： | 范超,陈堂胜,杨立杰,冯欧,焦世龙,吴云峰,叶玉堂.10Gb/s OEIC光接收机前端及3.125Gb/s限幅放大器[J].半导体学报,2009,30(10):105009-4. |
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| 作者姓名： | 范超 陈堂胜 杨立杰 冯欧 焦世龙 吴云峰 叶玉堂 |
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| 摘 要： | 摘要：基于南京电子器件研究所Φ76mm GaAs pHEMT工艺，研制了10Gb/s OEIC光接收机前端，并首次采用耗尽型PHEMT设计并实现了限幅放大器。借助模拟软件ATLAS建立并优化了器件模型，组成形式为MSM光探测器和电流模跨阻放大器，探测器带宽超过10GHz，电容约3fF/μm，光敏面积50×50μm2，整个芯片面积1511μm×666μm。限幅放大器采用无源电感扩展带宽，并借助三维电磁仿真软件HFSS进行模拟仿真。限幅放大器芯片面积1950μm×1910μm，在3.125Gb/s传输速率下，分别输入10mVpp和500mVpp，可以得到500mVpp恒定输出摆幅。
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| 关 键 词： | 光电集成 MSM 电流模跨阻放大器 耗尽型PHEMT 限幅放大器 |
| 收稿时间： | 2/21/2009 8:00:59 PM |
10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier |
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| Fan Chao,Chen Tangsheng,Yang Lijie,Feng Ou,Jiao Shilong,Wu Yunfeng and Ye Yutang.10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier[J].Chinese Journal of Semiconductors,2009,30(10):105009-4. |
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| Authors: | Fan Chao Chen Tangsheng Yang Lijie Feng Ou Jiao Shilong Wu Yunfeng and Ye Yutang |
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| Affiliation: | School of Opto-Electronic Information, UESTC, Chengdu 610054, China; Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China;Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | |
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| Keywords: | OEIC MSM photodiode current mode TIA depletion mode PHEMT limiting amplifier |
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