Synthesis and characterization of BN thin films prepared by plasma MOCVD with organoboron precursors |
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| Authors: | Haruyuki Yasui Kaoru Awazu Noriyuki Sakudo |
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| Affiliation: | a Industrial Research Institute of Ishikawa, 2-1, Kuratsuki, Kanazawa, Ishikawa 9208203, Japan
b Advanced Materials Science Research and Development Center, Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 9218501, Japan |
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| Abstract: | Boron nitride (BN) films have contributed to improvement of tribological parts. For this study, we prepared films using plasma MOCVD with an organoborate precursor and investigated the mechanical properties and structure of BN films. The BN films were formed on specimens of silicon wafers and tungsten carbide (WC) substrates at low temperatures of less than 500 °C. Hardness tests were carried out to evaluate mechanical properties of BN films. The structure of BN films was investigated using XRD, Raman, and FT-IR spectra. |
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| Keywords: | Boron nitride (BN) MOCVD Trimethyl borate Hardness XRD Raman FT-IR |
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