| MOCVD法制备钯膜用的前驱体研究现状 |
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| 引用本文： | 陈高芳,常桥稳,谌喜珠,叶青松,陈立桥,刘伟平.MOCVD法制备钯膜用的前驱体研究现状[J].贵金属,2012,33(1):78-83. |
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| 作者姓名： | 陈高芳 常桥稳 谌喜珠 叶青松 陈立桥 刘伟平 |
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| 作者单位： | 昆明贵金属研究所稀贵金属综合利用新技术国家重点实验室,昆明,650106 |
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| 基金项目： | 云南省科研院所技术开发研究专项 |
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| 摘 要： | 金属钯薄膜作为一种新型的稀贵金属低维材料,因为其优异的物理和化学性能,在耐高温涂层、微电子、膜反应器、催化等领域有着非常重要的应用。钯薄膜优异的性能及广阔的应用前景引起人们广泛的关注。介绍了金属有机化学气相沉积(MOCVD)法制备钯膜用前驱体的研究进展以及MOCVD工艺中各类前驱体的优缺点,概述了其目前研究的热点和进一步研究的方向。
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| 关 键 词： | 金属材料 钯薄膜 前驱体 金属有机化学气相沉积 |
Research Situation of Precursors for Palladium Thin Films by MOCVD Process |
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| CHEN Gaofang
,
CHANG Qiaowen
,
CHEN Xizhu
,
YE Qingsong
,
CHEN Liqiao
,
LIU Weiping.Research Situation of Precursors for Palladium Thin Films by MOCVD Process[J].Precious Metals,2012,33(1):78-83. |
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| Authors: | CHEN Gaofang CHANG Qiaowen CHEN Xizhu YE Qingsong CHEN Liqiao LIU Weiping |
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| Affiliation: | (State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals,Kunming 650106,China) |
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| Abstract: | Palladium thin film as a new precious metal material has a variety of important technological applications in many fields because of its excellent physical and chemical properties,such as protective coatings for high temperature,dielectric films in microelectronics and catalysis.It has attracted much attention in recent years due to its excellent properties and potential applications.In this article,the progress and situation on research of precursors for palladium thin films by MOCVD were introduced.The advantages and disadvantages of each precursors were discussed.The current focus and direction in the research field were summarized. |
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| Keywords: | metal material palladium films precursors MOCVD |
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