Enhancement of integrity of polysilicon oxide by using acombination of N2O nitridation and CMP process |
| |
| Authors: | Tan Fu Lei Jiann Heng Chen Ming Fang Wang Tien Sheng Chao |
| |
| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
| |
| Abstract: | This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combing N2O nitridation and chemical mechanical polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qhd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide |
| |
| Keywords: | |
|
|
