MOSFET thermal noise modeling for analog integrated circuits |
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| Authors: | Bing Wang Hellums J.R. Sodini C.G. |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA; |
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| Abstract: | ![]()
The effects of device geometry, oxide thickness, and bias condition on the thermal noise of MOSFET's are investigated. The experimental results show that the conventional MOSFET thermal noise models do not accurately predict the thermal noise of MOSFET's. A model that is capable of predicting the thermal noise of both long and short channel devices in both the triode and saturation regions is presented. This model, which can be easily implemented into existing circuit simulators such as SPICE, has been verified by a wide variety of measurements |
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