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溅射沉积Cu膜生长的Monte Carlo模拟
引用本文:刘祖黎,张雪锋,姚凯伦,黄运米.溅射沉积Cu膜生长的Monte Carlo模拟[J].真空科学与技术学报,2005,25(2):83-88.
作者姓名:刘祖黎  张雪锋  姚凯伦  黄运米
作者单位:华中科技大学物理系,武汉,430074
摘    要:在本文中,我们建立了一个较完整的基于动力学晶格蒙特卡罗方法的模拟薄膜生长的三维模型,利用该模型我们研究了溅射沉积条件下粒子的沉积角度、沉积速率以及入射能量对Cu膜生长的影响.模拟结果表明Cu膜表面粗糙度会随沉积角度和沉积速率的增大而增大,而相对密度随之减小.模拟的薄膜的三维形貌显示,在薄膜的表面存在着柱状结构,这与实验是相符的.

关 键 词:薄膜生长  三维形貌  Monte  Carlo  表面粗糙度  相对密度
文章编号:1672-7126(2005)02-0083-05
修稿时间:2004年6月17日

Monte Carlo Simulation of Cu Thin Film Growth by Magnetron Sputtering
Liu Zuli,Zhang Xuefeng,Yao Kailun,Hung Yunmi.Monte Carlo Simulation of Cu Thin Film Growth by Magnetron Sputtering[J].JOurnal of Vacuum Science and Technology,2005,25(2):83-88.
Authors:Liu Zuli  Zhang Xuefeng  Yao Kailun  Hung Yunmi
Abstract:Monte Carlo simulation of Cu film growth by magnetron sputtering with a three-dimensional kinetic lattice model was done.Influence of various factors,including incident angles and energies of the impinging particles,and deposition rate,on film growth was analytically evaluated.The results show that higher deposition rate and larger incident angle result in rougher surfaces.The simulated images of the film display a column structures,agreeing well with the experimental results of our group and other researchers.
Keywords:The growth of thin film  Three-dimensional morphology  Monte Carlo  Surface roughness  Relative density
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