Resonant tunnelling in Ga0.47In0.53As/InPdouble-barrier structures grown by AP-MOCVD |
| |
| Authors: | Higgs A.W. Taylor L.L. Apsley N. Bass S.J. Hutchinson H.J. |
| |
| Affiliation: | R. Signals & Radar Establ., Great Malvern; |
| |
| Abstract: | ![]()
Reports the first observation of negative-differential resistance in Ga0.47In0.53As/InP double-barrier structures grown by AP-MOCVD. The devices exhibit the largest peak/valley current ratios seen in this system; 1.2:1 (2.8:1) and 3.0:1 (5.5:1) at 77 K (4.2 K) for the n=1 and n=2 resonances respectively |
| |
| Keywords: | |
|
