| 具有场板结构的AlGaN/GaN HEMT的直流特性 |
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| 引用本文： | 魏珂,刘新宇,和致经,吴德馨.具有场板结构的AlGaN/GaN HEMT的直流特性[J].半导体学报,2008,29(3):554-558. |
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| 作者姓名： | 魏珂 刘新宇 和致经 吴德馨 |
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| 作者单位： | [1]中国科学院微电子研究所,北京100029 [2]中国科学院半导体研究所,北京100083 |
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| 基金项目： | 国家重点基础研究发展规划(973计划)
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中国科学院重点创新项目 |
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| 摘 要： | 研制成功具有场板结构的AIGaN/GaN HEMT器件,对源场板、栅场板器件的性能进行了分析.场板的引入减小了器件漏电和肖特基漏电,提高了肖特基反向击穿电压.源漏间距4靘的HEMT的击穿电压由常规器件的65V提高到100V以上,肖特基反向漏电由37霢减小到5.7霢,减小了一个量级.肖特基击穿电压由常规结构的78V提高到100V以上.另外,还初步讨论了高频特性.
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| 关 键 词： | AIGaN/GaN 高迁移率晶体管 肖特基特性 击穿电压 场板结构 |
| 文章编号： | 0253-4177(2008)03-0554-05 |
| 收稿时间： | 6/15/2007 1:20:44 PM |
| 修稿时间： | 2007年6月15日 |
DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate |
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| Wei Ke,Liu Xinyu,He Zhijing and Wu Dexin.DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate[J].Chinese Journal of Semiconductors,2008,29(3):554-558. |
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| Authors: | Wei Ke Liu Xinyu He Zhijing and Wu Dexin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | This paper reports two kinds of AlGaN/GaN HEMTs with the field plate gate.In contrast with a conventional HEMT structure,their DC characteristics are improved and the broken voltage is over 100V.The reverse leakage current of the Schottky gate is reduced from 0.037 to 0.0057mA with a 100V voltage between gate and drain using a field plate.Its broken voltage is increased from 78 to over 100V.The HEMTs with the gate field plate structure and the source field plate structure are compared and their high frequency characteristics are also discussed. |
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| Keywords: | AlGaN/GaN HEMT broken voltage Schottky characteristics field plate structure |
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