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WO3/SnO2复合薄膜的制备及光电性能
引用本文:刘硕,周龙杰,王贺,王航,李晶晶,黄金亮.WO3/SnO2复合薄膜的制备及光电性能[J].半导体光电,2023,44(4):591-595.
作者姓名:刘硕  周龙杰  王贺  王航  李晶晶  黄金亮
作者单位:河南科技大学 材料科学与工程学院, 河南 洛阳 471000
基金项目:高端外国专家项目(GDW2017410125).通信作者:黄金亮 E-mail:huangjl@haust.edu.cn
摘    要:采用水热法和电化学沉积法,成功制备了包覆有SnO2纳米颗粒的WO3纳米棒阵列薄膜,退火处理后形成WO3/SnO2异质结复合薄膜。通过改变SnO2的沉积时间得到了复合薄膜的最佳制备条件。采用XRD,FESEM对WO3/SnO2复合薄膜的物相和形貌进行了分析,通过电化学工作站对WO3/SnO2复合薄膜的光电性能进行了研究,结果表明,电沉积时间为120 s时,WO3/SnO2复合薄膜具有最小的阻抗,且在0.6 V的偏压下光电流密度为0.46 mA/cm2,相比于单一WO3纳米棒薄膜,表现出更好的光电化学性能。

关 键 词:WO3  SnO2  复合薄膜  电沉积  光电性能
收稿时间:2023/5/10 0:00:00

Preparation and Photoelectric Properties of WO3/SnO2 Composite Films
LIU Shuo,ZHOU Longjie,WANG He,WANG Hang,LI Jingjing,HUANG Jinliang.Preparation and Photoelectric Properties of WO3/SnO2 Composite Films[J].Semiconductor Optoelectronics,2023,44(4):591-595.
Authors:LIU Shuo  ZHOU Longjie  WANG He  WANG Hang  LI Jingjing  HUANG Jinliang
Affiliation:School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471000, CHN
Abstract:WO3 nanorods array films coated with SnO2 nanoparticles were prepared by hydrothermal method and electrochemical deposition method, and WO3/SnO2 heterojunction composite films were formed after annealing. The optimum preparation conditions were obtained by changing the deposition time of SnO2. The phase and morphology of WO3/SnO2 composite film were analyzed by XRD and FESEM. The photoelectric properties of WO3/SnO2 composite film were studied by electrochemical workstation. The results show that WO3/SnO2 composite film has the minimum impedance when the deposition time is 120s. And its photocurrent density is 0.46mA/cm2 at a bias voltage of 0.6V, showing better photochemical properties than a single WO3 nanorod film.
Keywords:WO3  SnO2  composite film  electro-deposition  photoelectric property
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