| Study on Thermal Transport Coefficient of Electron in the Siliconized HT－7 Tokamak |
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| 引用本文： | 张先梅,万宝年,陆元成,滕月莉. Study on Thermal Transport Coefficient of Electron in the Siliconized HT－7 Tokamak[J]. 等离子体科学和技术, 2003, 5(5): 1949-1954 |
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| 作者姓名： | 张先梅 万宝年 陆元成 滕月莉 |
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| 作者单位： | Department of Physics,East China of University of Science and Technology,Shanghai 200237 China,Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,China,Department of Physics,East China of University of Science and Technology,Shanghai 200237 China,Department of Physics,East China of University of Science and Technology,Shanghai 200237 China |
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| 基金项目： | The project supported by the Meg-Science Engineering Project of the Chinese Academy of Sciences |
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| 摘 要： | Siliconization is a normal method for the first-wall conditioning on the HT-7 toka-mak. After siliconization the total radiation loss is reduced significantly. Heat-diffusion coefficient the electron of is reduced obviously at the outer half radius (r/a > 0.5) after siliconization. And the plasma confinement is improved effectively. At the core of the plasma, electromagnetic drift-wave mode driven by the temperature gradient of electron gives a good representation of the experimental data not only before siliconization but also after siliconization. But at the outer half radius, the Parail's electromagnetic drift-wave even mode gives a good description of the experimental data before siliconization, and the experimental data of Xe is close to the collisionless electrostatic drift-wave mode turbulence after siliconization.
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| 关 键 词： | 热传导系数 电子 托卡马克装置 放射性 等离子体 |
Study on Thermal Transport Coefficient of Electron in the Siliconized HT-7 Tokamak |
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| Zhang Xianmei Wan Baonian Lu YuanchengTeng Yueli. Study on Thermal Transport Coefficient of Electron in the Siliconized HT-7 Tokamak[J]. Plasma Science & Technology, 2003, 5(5): 1949-1954 |
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| Authors: | Zhang Xianmei Wan Baonian Lu YuanchengTeng Yueli |
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| Affiliation: | Department of Physics, East China of University of Science and Technology, Shanghai 200237 China;Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | Siliconization is a normal method for the first-wall conditioning on the HT-7 toka-mak. After siliconization the total radiation loss is reduced significantly. Heat-diffusion coefficient the electron of is reduced obviously at the outer half radius (r/a > 0.5) after siliconization. And the plasma confinement is improved effectively. At the core of the plasma, electromagnetic drift-wave mode driven by the temperature gradient of electron gives a good representation of the experimental data not only before siliconization but also after siliconization. But at the outer half radius, the Parail's electromagnetic drift-wave even mode gives a good description of the experimental data before siliconization, and the experimental data of Xe is close to the collisionless electrostatic drift-wave mode turbulence after siliconization. |
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| Keywords: | electron thermal transport coefficient siliconization tokamak |
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