Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion

We report the first confirmation of disordering of ZnSe/ZnS strained layer superlattices (SLSs) by Ge diffusion. The as-grown sample showed ±first orders of well-resolved double crystal x-ray satellite peaks due to SLS periodic structure. However, the satellite peaks completely disappeared in the Ge-diffused sample, indicating that the SLS structure was disordered by the Ge diffusion. Photoluminescence measurements at 1.4K of both the as-grown and the annealed samples without Ge diffusion show identical, sharp excitonic emission around 420 nm. After Ge diffusion, the PL peaks shift to higher energy confirming the layer disordering of the SLS.