Lateral schottky GaN rectifiers formed by Si<Superscript>+</Superscript> ion implantation期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Lateral schottky GaN rectifiers formed by Si+ ion implantation

Authors:	Y. Irokawa Jihyun Kim F. Ren K. H. Baik B. P. Gila C. R. Abernathy S. J. Pearton C. -C. Pan G. -T. Chen J. -I. Chyi

Affiliation:	(1) Toyota Central Research and Development Laboratories, Inc., Nagakute, 480-1192 Aichi, Japan;(2) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL;(3) Department of Materials Science and Engineering, University of Florida, USA;(4) Department of Electrical Engineering, National Central University, 32054 Chung-Li, Taiwan, Republic of China

Abstract:	Type conversion of p-GaN by direct Si⁺ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si⁺ activation percentage was measured as a function of annealing time (30–300 sec) and temperature (1,000–1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1×10¹⁸ cm⁻³ for a moderate Si⁺ ion dose of ∼2×10¹⁴ cm⁻². The lateral Schottky diodes displayed a negative temperature coefficient of −0.15 V·K for reverse breakdown voltage.

Keywords:	GaN lateral Schottky diodes ion implantation
本文献已被 SpringerLink 等数据库收录！