Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures |
| |
| Authors: | B R Bennett J A del Alamo M T Sinn F Peiró A Cornet D E Aspnes |
| |
| Affiliation: | (1) Naval Research Laboratory, 20375-5347 Washington, DC;(2) Massachusetts Institute of Technology, 02139 Cambridge, MA;(3) University of Barcelona, Diagonal 645-647, 08028 Barcelona, Spain;(4) North Carolina State University, 27695-8202 Raleigh, NC |
| |
| Abstract: | Optical anisotropy in mismatched InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy.
The two approaches are shown to yield strongly correlated results. A comparison to high resolution x-ray diffraction, transmission
electron microscopy, and atomic force microscopy studies indicates that large optical anisotropies are associated with surface
roughening that results from three-dimensional growth. Our findings demonstrate that fast and nondestructive measurements
of optical anisotropy can provide important information about the growth mode and crystalline quality of strained epitaxial
layers.
Formerly with Massachusetts Institute of Technology. |
| |
| Keywords: | Ellipsometry heterostructure InP optical anisotropy (OA) reflectance difference spectroscopy |
| 本文献已被 SpringerLink 等数据库收录！ |
|
