单/双离子替代对铁酸铋薄膜性能影响的研究进展

铁酸铋在室温下既可表现出铁电性又可表现出反铁磁性,在器件应用上有非常大的应用前景,因此被认为是最有前途的多铁性化合物之一。本文综述了多铁性材料的发展历史、铁酸铋晶体结构以及国内外近年来关于铁酸铋薄膜铁电性能离子替代改性的相关工作及研究进展。本文重点围绕由镧系和低价碱金属元素的A位替代、过渡族金属元素的B位替代,以及A,B位共同替代对铁酸铋薄膜的漏电流、铁电性的影响,并系统总结了不同元素、不同掺杂量对A,B位替代的铁酸铋薄膜的剩余极化和矫顽电场值的影响,更为直观地展现出各类元素离子替代改性对铁酸铋薄膜的影响。本文最后提出了关于铁酸铋薄膜制造工艺、电极材料、薄膜厚度和操作电压等亟待开展的工作。

Research progress on the effect of single/double ion substitution of bismuth ferrite film

Bismuth ferrite is considered to be the largest prospect in the field of device, owing to its both ferroelectricity and antiferromagnetic property at room temperature.It is considered to be the most promising multiferroic compound.The history of the development of multiferroic materials, the crystal structure of bismuth ferrite, and related work and progress on ion substitution modification of ferroelectric properties of bismuth ferrite film in recent years were reviewed in this paper.The focus was on the replacement of the A site by the lanthanide and the low cost alkali metal element, the substitution of the B-site by the transition metal element, and the common substitution of the A and B sites for the leakage current and ferroelectricity of the bismuth ferrite film .The effect of different elements and different doping amounts on residual polarization and coercive electric field value of bismuth ferrate film substituted by A and B sites were systematically summarized.Accordingly, the effect of various elemental ion substitution modification on bismuth ferrite film can be more intuitively understood.At the end of this paper, the urgent work on the influence of fabrication process, electrode material, film thickness and operating voltage of bismuth ferrite thin films was put forward.