| Solid State Reaction Synthesis and Thermoelectric Properties of Mg2Si doped with Sb and Te |
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| 作者单位： | Wuhan University of Technology |
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| 摘 要： | ![]()
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| 关 键 词： | 热电性 Mg2Si 锑 Sb Te 碲 化合物 电传导率 热电材料 |
| 收稿时间： | 2001-10-17 |
Solid state reaction synthesis and thermoelectric properties of Mg2Si doped with Sb and Te |
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| Jiang Hong-yi,Shen Qiang,Zhang Lian-meng. Solid state reaction synthesis and thermoelectric properties of Mg2Si doped with Sb and Te[J]. Journal of Wuhan University of Technology. Materials Science Edition, 2002, 17(2): 36-38. DOI: 10.1007/BF02832618 |
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| Authors: | Jiang Hong-yi Shen Qiang Zhang Lian-meng |
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| Affiliation: | (1) School of Materials Science and Engineering, Wuhan University of Technology, 430070 Wuhan, China |
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| Abstract: | ![]()
Doped with Sb and Te, Mg2 Si based compounds were prepared respectively by solid state reaction at 823K for 8h. Effects of dopants of Sb and Te on the structure and thermoelectric properties of the compounds were investigated. By calculating the values of the electrical conductivity for Sb-doped sample, the mechanism of electric conduction at 625 K is different. The figure of merit for sample doped with 0.4wt% Te at 500K is 2.4×10−3W/mK2, and it reaches 3.3×10−3 W/mK2 at 650K for the sample doped with 0.5wt% Sb. The values are more than 1.4 times and 2.3 times of the pure Mg2Si sample. JIANG Hong-yi : Born in 1961 |
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| Keywords: | solid state reaction doping of Sb and Te thermoelectric properties |
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