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ZnO纳米线的低温生长及其发光特性
引用本文:常鹏,刘肃,陈溶波,唐莹,韩根亮.ZnO纳米线的低温生长及其发光特性[J].半导体学报,2007,28(10):1503-1507.
作者姓名:常鹏  刘肃  陈溶波  唐莹  韩根亮
作者单位:兰州大学物理科学与技术学院,兰州 730000;兰州大学物理科学与技术学院,兰州 730000;兰州大学物理科学与技术学院,兰州 730000;兰州大学物理科学与技术学院,兰州 730000;甘肃省科学院传感技术研究所,兰州 730000
摘    要:采用电场辅助电化学沉积的方法在阳极氧化铝模板中沉积出ZnO纳米线阵列.透射电子显微镜和X射线衍射测试结果表明,制备的纳米线是单晶ZnO纳米线,形貌均匀,直径大约为60nm,并且择优于(101)晶面.对生长过程中所加的辅助电场的作用给出了初步解释.光致发光谱表明,在350~650nm范围内存在一个很宽的发光峰.

关 键 词:ZnO  电化学  纳米线  PL谱  ZnO  electrochemical  nanowires  PL  spectrum
文章编号:0253-4177(2007)10-1503-05
修稿时间:6/18/2007 3:34:35 PM

Low Temperature Synthesis and Optical Properties of ZnO Nanowires
Chang Peng,Liu Su,Chen Rongbo,Tang Ying and Han Genliang.Low Temperature Synthesis and Optical Properties of ZnO Nanowires[J].Chinese Journal of Semiconductors,2007,28(10):1503-1507.
Authors:Chang Peng  Liu Su  Chen Rongbo  Tang Ying and Han Genliang
Affiliation:School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;Institute of Sensor Technology,Gansu Academy of Sciences,Lanzhou 730000,China
Abstract:ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.
Keywords:ZnO  electrochemical  nanowires  PL spectrum
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