Temperature dependence of lasing characteristics forlong-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm² is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above ~225 K. Our results suggest that very low threshold current density (⩽20 A/cm ²) can be achieved at room temperature from 1.3-μm QD lasers, once nonradiative recombination is eliminated