A simple edge termination for silicon carbide devices with nearlyideal breakdown voltage |
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| Authors: | Alok D. Baliga B.J. McLarty P.K. |
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| Affiliation: | Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC; |
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| Abstract: | In this paper, a simple edge termination is described which can achieve near ideal parallel plane breakdown for silicon carbide devices. This novel edge termination involves self aligned implantation of a neutral species on the edges of devices to form an amorphous layer. With this termination formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to ideal plane parallel breakdown voltage |
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