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Development of partial-charge potential for GaN
Authors:Fei Gao  Ram Devanathan  Takuji Oda  William J Weber
Affiliation:

aFundamental Science Directorate, Pacific Northwest National Laboratory, MS K8-93, P.O. Box 999, Richland, WA 99352, USA

bDepartment of Quantum Engineering, The University of Tokyo, Tokyo 113-5686, Japan

Abstract:Partial-charged potentials for GaN are systematically developed that describe a wide range of structural properties, where the reference data for fitting the potential parameters are taken from ab initial calculations or experiments. The present potential model provides a good fit to different structural geometries and high pressure phases of GaN. The high-pressure transition from wurtzite to rock-salt structure is correctly predicted yielding the phase transition pressure of about 55 GPa, and the calculated volume change at the transition is in good agreement with experimental data. The results are compared with those obtained by ab initio simulations.
Keywords:Potential development  Phase transition  Computer simulation  GaN
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