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V_2O_5掺杂MgTiO_3-CaTiO_3陶瓷的介电性能
引用本文:杨秀玲,丁士华,宋天秀,张东.V_2O_5掺杂MgTiO_3-CaTiO_3陶瓷的介电性能[J].电子元件与材料,2008,27(10).
作者姓名:杨秀玲  丁士华  宋天秀  张东
作者单位:西华大学,材料科学与工程学院,四川,成都,610039
基金项目:四川省教育厅资助项目,西华大学校科研和教改项目
摘    要:采用固相反应法制备了V2O5掺杂的MgTiO3-CaTiO3(MCT)介质陶瓷。研究了V2O5掺杂量对陶瓷晶相组成、烧结温度和介电性能的影响。结果表明:V2O5掺杂的MCT陶瓷的主晶相为MgTiO3和CaTiO3两相结构,当掺杂量较低时,有第二相CaVO3产生;V2O5掺杂能降低MCT陶瓷的烧结温度并使其介电性能得到改善。当x(V2O5)为1%时,在1250℃烧结2.5h获得最佳性能:εr为20.17,tanδ为2×10–3,αε为4.9×10–5/℃。

关 键 词:无机非金属材料  MgTiO3-CaTiO3陶瓷  V2O5掺杂  介电性能

Dielectric properties of V_2O_5-doped MgTiO_3-CaTiO_3 ceramics
YANG Xiu-ling,DING Shi-hua,SONG Tian-xiu,ZHANG Dong.Dielectric properties of V_2O_5-doped MgTiO_3-CaTiO_3 ceramics[J].Electronic Components & Materials,2008,27(10).
Authors:YANG Xiu-ling  DING Shi-hua  SONG Tian-xiu  ZHANG Dong
Affiliation:YANG Xiu-ling,DING Shi-hua,SONG Tian-xiu,ZHANG Dong ( College of Materials Science&Engineering,Xihua University,Chengdu 610039,China )
Abstract:V2O5-doped MgTiO3-CaTiO3(MCT) ceramics were prepared with solid-state reaction method. The effects of V2O5-doped amounts on sintering temperature, phase composition and dielectric properties of MCT ceramics were investigated. The results show that MgTiO3 and CaTiO3 are the main crystal phase of MCT ceramics with V2O5 additive, the second phase CaVO3 is observed when small amount V2O5 is added; the sintering temperature of V2O5-doped MCT ceramics is lowered to 1 250 ℃ due to the liquid phase effect, and the dielectric loss is reduced, morever, the temperature coefficient is adjusted with V2O5 additive. MCT ceramics with 1% V2O5 additive sintering at 1 250 ℃ possesses the best dielectric properties: εr is 20.17, tan δ is 2×10–3 and αε is 7.1×10–5/℃。
Keywords:non-metallic inorganic material  MgTiO3-CaTiO3 ceramics  V2O5-doping  dielectric properties  
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