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Effect of the electrode structure on the electrical properties of alkoxide derived ferroelectric thin film |
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| Authors: | Tomoya Ohno Takeshi Matsuda Naonori Sakamoto Shou Tokuda |
| Affiliation: | a Department of Materials Science and Engineering, Kitami Institute of Technology, 165 Kouen-chi, Kitami, Hokkaidoh 090-8507, Japan b Department of Materials Science, Shizuoka University, 3-5-1, Johoku, Hamamatsu, Shizuoka 432-8561, Japan c Technical Division, Kitami Institute of Technology, 165 Kouen-cho, Kitami, Hokkaido 090-8507, Japan |
| Abstract: | Effect of the thermal expansion coefficient of electrode on the electrical properties in lead zirconate titanate (PZT) with morphotropic phase boundary (Pb(Zr0.53,Ti0.47)O3: MPB) composition film was demonstrated in this paper. The lanthanum nickel oxide (LaNiO3: LNO) and lanthanum strontium cobalt oxide ((La0.5,Sr0.5)CoO3: LSCO) was deposited by chemical solution deposition (CSD) as bottom electrode on Si wafer. Highly (100)-oriented LSCO layers were successfully prepared by CSD on Si wafer using (100)-oriented LNO layers as seeding layer for the crystal orientation control. As a result, (100) and (001) oriented PZT film was also successfully prepared on LSCO/LNO/Si stacking structure. The obtained dielectric and ferroelectric properties changed according to the thermal stress which was influenced by the bottom electrode thickness. |
| Keywords: | Thin films Ferroelectrics Stress engineering Chemical solution deposition |
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