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Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD
Authors:A. Marzouki  F. Falyouni  A. Lusson  L. Rigutti  M. Tchernycheva  V. Sallet
Affiliation:
  • a Groupe d'Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, 1place A. Briand, 92195 Meudon Cedex, France
  • b Institut d'Electronique Fondamentale, Université Paris Sud XI, UMR 8622 CNRS, 91405 Orsay, France
  • c Unité de Spectroscopie Raman, Faculté des Sciences de Tunis, le Belvedere, Tunis, Tunisia
  • Abstract:One dimensional nitrogen-doped ZnO nanowires were deposited on C-plane sapphire using metal organic chemical vapour deposition. Nanowires have been characterized by scanning electron microscopy, transmission electron microscopy, micro-Raman scattering and micro-photoluminescence spectroscopy. The structural analysis has shown a high crystalline quality. In N-doped ZnO nanowires nitrogen incorporation was emphasized by Raman spectral analysis and reduction of nitrogen concentration along the wire, from the bottom to the top was found by local analysis. Low temperature micro-photoluminescence spectra exhibit donor-acceptor pair transitions.
    Keywords:A1.Doping   A3.MOCVD   B1.Oxides   B2.Semiconducting II-VI materials
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