The sulfur incorporation and the growth of GaAs submicrometer epilayers in Ga-AsCl3-H2 system

Submicrometer epilayers have been grown in Ga-AsCl₃-H₂ system using elemental sulfur as a dopant. The mechanism of sulfur incorporation was discussed on the basis of surface adsorption. It has been shown that the electrical properties of single epilayers are typicallyn=1–2×10¹⁷/cm², thickness 0.4 μm and breakdown voltage about 7–10V. The width of interface region in single and multilayer structures is about 0.1μm. The epilayers obtained have been used to fabricate the microwave devices, such as Gunn diodes, varactors, and far infrared detectors.