Morphological and electrical effect of an ultrathin iridium oxide hole extraction layer on P3HT:PCBM bulk-heterojunction solar cells

An ultrathin iridium layer was treated with O₂-plasma to form an iridium oxide (IrO_x), employed as a hole extraction layer in order to replace poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) in organic photovoltaic (OPV) cells with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM). The IrO_x layer affects the self-organization of the P3HT:PCBM photo-active layer due to its hydrophobic nature, inducing a well-organized intraplane structure with lamellae oriented normal to the substrate. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased by 0.57 eV as the Ir layer on ITO changed to IrO_x by the O₂-plasma treatment. The OPV cell with IrO_x (2.0 nm) exhibits increased power conversion efficiency as high as 3.5% under 100 mW cm⁻² illumination with an air mass (AM 1.5G) condition, higher than that of 3.3% with PEDOT:PSS.