Influence of electron energy on the characteristics of electron-beam-pumped semiconductor lasers

The influence of electron energy on the characteristics of electron-beam-pumped GaAs lasers is studied experimentally. Increases in the electron energy lead to increases in output power and decreases in beam divergence. Above radiation-damage threshold, a degradation of the laser output with time is observed due to bulk defects created by the beam. These defects are partially self-annealing if radiation is stopped.