Chemical mechanical polishing of polymer films |
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Authors: | Dan Towery Michael A Fury |
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Affiliation: | (1) AlliedSignal Inc., Advanced Microelectronic Materials, 1349 Moffett Park Drive, 94089 Sunnyvale, CA |
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Abstract: | Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating
low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC
fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables
tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide
(ZrO2) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8.
In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance
of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information
presented in this paper is relevant to the CMP performance of many polymer dielectric materials. |
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Keywords: | Chemical-mechanical polishing (CMP) FLARE™ 2 0 low-κ dielectric |
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