InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm |
| |
| Authors: | Ochiai M. Temkin H. Forouhar S. Logan R.A. |
| |
| Affiliation: | Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO; |
| |
| Abstract: | Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm2 for 1-mm-long cavities, an internal loss of 11 cm-1, and characteristic temperatures as high as 50°C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined |
| |
| Keywords: | |
|
|
