过渡金属(Mn2+、Ni2+、Fe3+、Cu2+)掺杂ZnO基稀磁半导体的制备及性质

利用溶液腐蚀法制备了Mn2+、Ni2+、Fe3+、Cu2+离子掺杂的ZnO基稀磁半导体。XRD表明掺杂后的ZnO仍然保持单一的纤锌矿结构,没有任何杂质相产生。由紫外-可见光反射谱可知掺杂后吸收边发生了红移。掺杂前ZnO的带隙为3.20eV,对样品分别掺入Mn、Ni、Fe和Cu后的带隙分别为3.19eV、3.15eV、3.08eV和3.17eV。掺杂后样品的室温PL谱除了紫外发射峰外,对于Mn掺杂的样品还在蓝光区域出现了2个分别位于424nm和443nm的发射峰,Fe掺杂的样品出现了一个位于468nm的微弱发射峰,Cu掺杂的样品出现了位于469nm及535nm的很宽的发射峰。室温磁滞回线显示掺杂后样品有明显的铁磁性,掺入Mn、Ni、Fe和Cu样品的剩余磁化强度(Ms)分别为0.3902×10-3emu/cm3、0.454emu/cm3、0.372emu/cm3和0.962×10-3emu/cm3,矫顽力分别为47Oe、115.92Oe、99.33Oe和23Oe。经分析室温铁磁性来源于缺陷调制的Mn2+-Mn2+长程铁磁交换相互作用。

Synthesis and Properties of Transition Metal Doped ZnO Diluted Semiconductor

The properties of Mn2+,Ni2+,Fe3+,Cu2+doped ZnO nanocrystalline film grown on zinc foil by corrosion-based strategy were investigated.The X-ray photoelectron spectroscopy shows the samples have wurtzite structure and transition metals′ doping did′t introduce any impurity.UV-vis spectra exhibit a decrease in the band gap with the data is 3.20eV,3.19eV,3.15eV,3.08eV,3.17eV for pure ZnO,Mn-ZnO,Ni-ZnO,Fe-ZnO and Cu-ZnO respectively.Except the UV emission peak owing to the band gap of ZnO semiconductor,the photoluminescence spectra show the blue emission peaks centered at 424nm and 443nm for the Mn-doped ZnO film,blue emission peak centered at 468nm for Fe-doped ZnO and centered at 469nm and 535nm for Cu-doped ZnO.The magnetic properties of the Mn,Ni,Fe,Cu-doped ZnO exhibit a room temperature ferromagnetic characteristic with saturation magnetization(Ms) of 0.3902×10-3emu/cm3,0.454emu/cm3,0.372emu/cm3,0.962×10-3emu/cm3 and coercive field of 47Oe,115.92Oe,99.33Oe,23Oe.