Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics.Monolayer SnS2,with a band gap of ～2.6 eV,has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin.Till date,there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor.Here,we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity.In addition,the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time.Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers.The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150％,suggesting promise for optoelectronic applications.