A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology |
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| Authors: | Tohyama S Masubuchi K Konuma K Azuma H Tanabe A Utsumi H Teranishi N Takano E Yamagata S Hijikawa M Sahara H Muramatsu T Seki T Ono T Goto H |
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| Affiliation: | Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan; |
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| Abstract: | A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 /spl mu/m/spl times/30 /spl mu/m pixel, a 3.9 mm/spl times/3.9 mm image area, and a 5.5 mm/spl times/5.5 mm chip size. The charge handling capability for the 3.3 /spl mu/m wide VCCD achieves 9.8/spl times/10/sup 5/ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.<> |
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