| GaAs基异质结材料MBE生长及应用 |
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| 引用本文： | 邱凯,尹志军,谢自力.GaAs基异质结材料MBE生长及应用[J].固体电子学研究与进展,2002,22(2):227-230. |
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| 作者姓名： | 邱凯 尹志军 谢自力 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 摘 要： | 对 Ga As基调制掺杂异质结材料中作为沟道层的 In Ga As的生长条件进行优化 ,并在缓冲层中嵌入LT-Ga As。功率 PHEMT器件结果为在栅长 Lg=1 .7μm时 ,跨导 gm≥ 40 0 m S/mm,BVDS>1 5 V,BVGS>1 2 V,表明该材料有较好的性能
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| 关 键 词： | 分子束外延 调制掺杂 赝配高电子迁移率晶体管 低温砷化镓 |
| 文章编号： | 1000-3819(2002)02-227-04 |
| 修稿时间： | 2001年9月15日 |
MBE Growth of GaAs-Based Heterojunction Materials and Their Application |
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| QIU Kai,YIN Zhijun,XIE Zili.MBE Growth of GaAs-Based Heterojunction Materials and Their Application[J].Research & Progress of Solid State Electronics,2002,22(2):227-230. |
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| Authors: | QIU Kai YIN Zhijun XIE Zili |
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| Abstract: | The growth conditions of the strained InGaAs channel with the LT GaAs buffer layer for GaAs based PHEMT have been optimized. The performance of the developed PHEMT devices with L g=1.7 μm is summarized with extrinsic transconductance g m≥400 mS/mm, BV DS >15 V,and BV GS >12 V,revealed the success in device application. |
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| Keywords: | MBE modulated doping PHEMT LT GaAs |
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