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Memory Effects in the Charge Response of Lightly Doped La2?x Sr x CuO4 |
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| Authors: | I Rai?evi? Dragana Popovi? C Panagopoulos T Sasagawa |
| Affiliation: | 1. National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA 2. Division of Physics and Applied Physics, Nanyang Technological University, Singapore, Singapore 3. Department of Physics and FORTH, University of Crete, Crete, Greece 4. Materials and Structures Laboratory, Tokyo Institute of Technology, Kanagawa, Japan |
| Abstract: | The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes. |
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