Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor |
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Authors: | Kh S Karimov I Qazi T A Khan and M I Fedorov |
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Affiliation: | (1) Physical Technical Institute of Academy of Sciences, Dushanbe, 734025, Tajikistan;(2) GIK Institute of Engineering Science and Technology, Topi 23640 Swabi, N.W.F.P, Pakistan;(3) State Technical University, Vologda, 160035, Russia |
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Abstract: | A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical
response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured
under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold
voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent.
It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky
barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band
diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric
sensor agreed with experimental results.
Supported by the National Engineering and Scientific Commission of Pakistan |
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Keywords: | organic solar cell organic-inorganic heterojunction temperature dependent I-V characteristics |
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