| 大功率倒装结构GaN LED p电极研究 |
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| 引用本文： | 伊晓燕,马龙,郭金霞,王良臣,李晋闽.大功率倒装结构GaN LED p电极研究[J].半导体学报,2005,26(13):161-164. |
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| 作者姓名： | 伊晓燕 马龙 郭金霞 王良臣 李晋闽 |
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| 作者单位： | 中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083 |
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| 摘 要： | 从接触电阻、反射率、电流扩展等方面对Ni/Au/Ag,ITO/Ag,Ag等多种倒装结构p电极金属体系进行分析比较，给出了实现倒装结构大功率GaN LED p电极的多种设计方案. 指出Ni/Au金属化体系在大功率LED应用中存在的热稳定性问题及Ru,Ir等新型金属体系实现GaN p电极接触的潜在优势.
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| 关 键 词： | 大功率 倒装结构 LED p电极 高反射 接触电阻 |
Investigation of p-Electrode in High Power GaN-LED Application |
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| Yi Xiaoyan,Ma Long,Guo Jinxi,Wang Liangchen and Li Jinmin.Investigation of p-Electrode in High Power GaN-LED Application[J].Chinese Journal of Semiconductors,2005,26(13):161-164. |
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| Authors: | Yi Xiaoyan Ma Long Guo Jinxi Wang Liangchen and Li Jinmin |
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| Affiliation: | Institute of Semiconductors,Chinese Acadeny of Sciences, Beijing 100083,China;Institute of Semiconductors,Chinese Acadeny of Sciences, Beijing 100083,China;Institute of Semiconductors,Chinese Acadeny of Sciences, Beijing 100083,China;Institute of Semiconductors,Chinese Acadeny of Sciences, Beijing 100083,China;Institute of Semiconductors,Chinese Acadeny of Sciences, Beijing 100083,China |
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| Abstract: | The performance including contact resistance,reflectivity, and current spreading of several types of ohmic contacts to p-GaN is analyzed,such as Ni/Au/Ag,ITO/Ag,Ag, etc.Based on this data all kinds of p-electrode designs used in high power flip-chip LED are achieved.The mechanism of ohmic contact for the Ni/Au/p-GaN degrades under long-time high-temperature working,so low-resistance,high-reflectivity, and thermally stable ohmic contacts on p-GaN using Ru and Ir are proposed. |
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| Keywords: | high power flip-chip LED p electrode high reflectivity contact resistance |
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