Horizontal current bipolar transistor (HCBT): a new concept ofsilicon bipolar transistor technology

A new concept of silicon bipolar transistor technology is proposed. The resulting horizontal current bipolar transistor (HCBT) is simulated assuming the 0.25 μm technology. The surface of the device is smaller than conventional super-self aligned bipolar transistors. The same doping profile as in known vertical current devices is achieved by simpler technology using single polysilicon layer, without conventional epitaxial and n⁺ buried layers and with reduced number of lithography masks and technological steps. The simulated dc and ac characteristics of HCBT are similar to the characteristics of standard SST devices