Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications |
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| Authors: | J. W. Dong A. Osinsky B. Hertog A. M. Dabiran P. P. Chow Y. W. Heo D. P. Norton S. J. Pearton |
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| Affiliation: | (1) SVT Associates, Inc., 55344 Eden Prairie, MN;(2) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL |
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| Abstract: | We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction
MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy
(MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1−xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize
the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1−xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically
grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition
was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the
development of next-generation UV emitters using ZnO-based materials. |
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| Keywords: | MgZnO ZnO light emitting diodes UV emitters |
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