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Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Authors:Takahiro Tsukamoto  Nobumitsu Hirose  Akifumi Kasamatsu  Takashi Mimura  Toshiaki Matsui  Yoshiyuki Suda
Affiliation:1. Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo, 184-8588, Japan
2. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo, 184-8795, Japan
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